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Improved electrical properties of micro light-emitting diode displays by ion implantation technology
Generally, the inductively coupled plasma-reactive ion etching (ICP-RIE) mesa technology was used to remove p-GaN/MQWs and expose n-GaN for electrical contact in a fabricated micro light-emitting diode (μLED). In this process, the exposed sidewalls were significantly damaged which result in small-si...
| Autores principales: | , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10214901/ https://www.ncbi.nlm.nih.gov/pubmed/37382729 http://dx.doi.org/10.1186/s11671-023-03819-3 |