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Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study
This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a triple metal gate (VTG-TFET). We obtained improved switching characteristics for the proposed design because of the improved electrostatic control on the channel and the narrow bandgap source. It shows an I(...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10214927/ https://www.ncbi.nlm.nih.gov/pubmed/37382780 http://dx.doi.org/10.1186/s11671-023-03816-6 |