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Switching performance assessment of gate-all-around InAs–Si vertical TFET with triple metal gate, a simulation study

This study presents a gate-all-around InAs–Si vertical tunnel field-effect transistor with a triple metal gate (VTG-TFET). We obtained improved switching characteristics for the proposed design because of the improved electrostatic control on the channel and the narrow bandgap source. It shows an I(...

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Detalles Bibliográficos
Autores principales:	Madadi, Dariush, Mohammadi, Saeed
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2023
Materias:	Research
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10214927/ https://www.ncbi.nlm.nih.gov/pubmed/37382780 http://dx.doi.org/10.1186/s11671-023-03816-6

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