Highly Sensitive Detection of Urea Using Si Electrolyte-Gated Transistor with Low Power Consumption

We experimentally demonstrate Si-based electrolyte-gated transistors (EGTs) for detecting urea. The top-down-fabricated device exhibited excellent intrinsic characteristics, including a low subthreshold swing (SS) (~80 mV/dec) and a high on/off current ratio (~10(7)). The sensitivity, which varied d...

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Detalles Bibliográficos
Autores principales: Choi, Wonyeong, Jin, Bo, Shin, Seonghwan, Do, Jeonghyeon, Son, Jongmin, Kim, Kihyun, Lee, Jeong-Soo
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10216393/
https://www.ncbi.nlm.nih.gov/pubmed/37232926
http://dx.doi.org/10.3390/bios13050565

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10216393/
https://www.ncbi.nlm.nih.gov/pubmed/37232926
http://dx.doi.org/10.3390/bios13050565

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