A Low-Loss 1.2 kV SiC MOSFET with Improved UIS Performance

In this article, a 1.2-kV-rated double-trench 4H-SiC MOSFET with an integrated low-barrier diode (DT-LBDMOS) is proposed which eliminates the bipolar degradation of the body diode and reduces switching loss while increasing avalanche stability. A numerical simulation verifies that a lower barrier fo...

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Detalles Bibliográficos
Autores principales: Wu, Lijuan, Zhang, Mengyuan, Liang, Jiahui, Liu, Mengjiao, Zhang, Tengfei, Yang, Gang
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10220991/
https://www.ncbi.nlm.nih.gov/pubmed/37241684
http://dx.doi.org/10.3390/mi14051061

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10220991/
https://www.ncbi.nlm.nih.gov/pubmed/37241684
http://dx.doi.org/10.3390/mi14051061

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