Behaviors of AlGaN Strain Relaxation on a GaN Porous Structure Studied with d-Spacing Crystal Lattice Analysis

The high porosity of a GaN porous structure (PS) makes it mechanically semi-flexible and can shield against the stress from the thick growth template on an overgrown layer to control the lattice structure or composition within the overgrown layer. To understand this stress shield effect, we investig...

Descripción completa

Detalles Bibliográficos
Autores principales: Hsieh, Hao-Yu, Liou, Ping-Wei, Yang, Shaobo, Chen, Wei-Cheng, Liang, Li-Ping, Lee, Yueh-Chi, Yang, Chih-Chung (C. C.)
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221145/
https://www.ncbi.nlm.nih.gov/pubmed/37242033
http://dx.doi.org/10.3390/nano13101617

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221145/
https://www.ncbi.nlm.nih.gov/pubmed/37242033
http://dx.doi.org/10.3390/nano13101617

Ejemplares similares