Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics

In this work, we explored the potential of the ferroelectric gate of (Pb(0.92)La(0.08))(Zr(0.30)Ti(0.70))O(3) (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices. Based on the deep understanding of the V(Dirac) of PLZT(8/30/70) gate GFET, which determines the application of...

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Detalles Bibliográficos
Autores principales: Hu, Guangliang, Shen, Yinchang, Shen, Lvkang, Ma, Chunrui, Liu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221160/
https://www.ncbi.nlm.nih.gov/pubmed/37241425
http://dx.doi.org/10.3390/ma16103798

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221160/
https://www.ncbi.nlm.nih.gov/pubmed/37241425
http://dx.doi.org/10.3390/ma16103798

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