Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics

In this work, we explored the potential of the ferroelectric gate of (Pb(0.92)La(0.08))(Zr(0.30)Ti(0.70))O(3) (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices. Based on the deep understanding of the V(Dirac) of PLZT(8/30/70) gate GFET, which determines the application of the flexible GFET devices, the polarization mechanisms of PLZT(8/30/70) under bending deformation were analyzed. It was found that both flexoelectric polarization and piezoelectric polarization exist under bending deformation, and their polarization direction is opposite under the same bending deformation. Thus, a relatively stable of V(Dirac) is obtained due to the combination of these two effects. In contrast to the relatively good linear movement of V(Dirac) under bending deformation of relaxor ferroelectric (Pb(0.92)La(0.08))(Zr(0.52)Ti(0.48))O(3) (PLZT(8/52/48)) gated GFET, these stable properties of the PLZT(8/30/70) gate GFETs make them have great potential for applications in flexible devices.