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Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics
In this work, we explored the potential of the ferroelectric gate of (Pb(0.92)La(0.08))(Zr(0.30)Ti(0.70))O(3) (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices. Based on the deep understanding of the V(Dirac) of PLZT(8/30/70) gate GFET, which determines the application of...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221160/ https://www.ncbi.nlm.nih.gov/pubmed/37241425 http://dx.doi.org/10.3390/ma16103798 |
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author | Hu, Guangliang Shen, Yinchang Shen, Lvkang Ma, Chunrui Liu, Ming |
author_facet | Hu, Guangliang Shen, Yinchang Shen, Lvkang Ma, Chunrui Liu, Ming |
author_sort | Hu, Guangliang |
collection | PubMed |
description | In this work, we explored the potential of the ferroelectric gate of (Pb(0.92)La(0.08))(Zr(0.30)Ti(0.70))O(3) (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices. Based on the deep understanding of the V(Dirac) of PLZT(8/30/70) gate GFET, which determines the application of the flexible GFET devices, the polarization mechanisms of PLZT(8/30/70) under bending deformation were analyzed. It was found that both flexoelectric polarization and piezoelectric polarization exist under bending deformation, and their polarization direction is opposite under the same bending deformation. Thus, a relatively stable of V(Dirac) is obtained due to the combination of these two effects. In contrast to the relatively good linear movement of V(Dirac) under bending deformation of relaxor ferroelectric (Pb(0.92)La(0.08))(Zr(0.52)Ti(0.48))O(3) (PLZT(8/52/48)) gated GFET, these stable properties of the PLZT(8/30/70) gate GFETs make them have great potential for applications in flexible devices. |
format | Online Article Text |
id | pubmed-10221160 |
institution | National Center for Biotechnology Information |
language | English |
publishDate | 2023 |
publisher | MDPI |
record_format | MEDLINE/PubMed |
spelling | pubmed-102211602023-05-28 Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics Hu, Guangliang Shen, Yinchang Shen, Lvkang Ma, Chunrui Liu, Ming Materials (Basel) Article In this work, we explored the potential of the ferroelectric gate of (Pb(0.92)La(0.08))(Zr(0.30)Ti(0.70))O(3) (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices. Based on the deep understanding of the V(Dirac) of PLZT(8/30/70) gate GFET, which determines the application of the flexible GFET devices, the polarization mechanisms of PLZT(8/30/70) under bending deformation were analyzed. It was found that both flexoelectric polarization and piezoelectric polarization exist under bending deformation, and their polarization direction is opposite under the same bending deformation. Thus, a relatively stable of V(Dirac) is obtained due to the combination of these two effects. In contrast to the relatively good linear movement of V(Dirac) under bending deformation of relaxor ferroelectric (Pb(0.92)La(0.08))(Zr(0.52)Ti(0.48))O(3) (PLZT(8/52/48)) gated GFET, these stable properties of the PLZT(8/30/70) gate GFETs make them have great potential for applications in flexible devices. MDPI 2023-05-17 /pmc/articles/PMC10221160/ /pubmed/37241425 http://dx.doi.org/10.3390/ma16103798 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/). |
spellingShingle | Article Hu, Guangliang Shen, Yinchang Shen, Lvkang Ma, Chunrui Liu, Ming Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics |
title | Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics |
title_full | Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics |
title_fullStr | Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics |
title_full_unstemmed | Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics |
title_short | Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics |
title_sort | bending stability of ferroelectric gated graphene field effect transistor for flexible electronics |
topic | Article |
url | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221160/ https://www.ncbi.nlm.nih.gov/pubmed/37241425 http://dx.doi.org/10.3390/ma16103798 |
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