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Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics

In this work, we explored the potential of the ferroelectric gate of (Pb(0.92)La(0.08))(Zr(0.30)Ti(0.70))O(3) (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices. Based on the deep understanding of the V(Dirac) of PLZT(8/30/70) gate GFET, which determines the application of...

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Autores principales: Hu, Guangliang, Shen, Yinchang, Shen, Lvkang, Ma, Chunrui, Liu, Ming
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221160/
https://www.ncbi.nlm.nih.gov/pubmed/37241425
http://dx.doi.org/10.3390/ma16103798
_version_ 1785049390056996864
author Hu, Guangliang
Shen, Yinchang
Shen, Lvkang
Ma, Chunrui
Liu, Ming
author_facet Hu, Guangliang
Shen, Yinchang
Shen, Lvkang
Ma, Chunrui
Liu, Ming
author_sort Hu, Guangliang
collection PubMed
description In this work, we explored the potential of the ferroelectric gate of (Pb(0.92)La(0.08))(Zr(0.30)Ti(0.70))O(3) (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices. Based on the deep understanding of the V(Dirac) of PLZT(8/30/70) gate GFET, which determines the application of the flexible GFET devices, the polarization mechanisms of PLZT(8/30/70) under bending deformation were analyzed. It was found that both flexoelectric polarization and piezoelectric polarization exist under bending deformation, and their polarization direction is opposite under the same bending deformation. Thus, a relatively stable of V(Dirac) is obtained due to the combination of these two effects. In contrast to the relatively good linear movement of V(Dirac) under bending deformation of relaxor ferroelectric (Pb(0.92)La(0.08))(Zr(0.52)Ti(0.48))O(3) (PLZT(8/52/48)) gated GFET, these stable properties of the PLZT(8/30/70) gate GFETs make them have great potential for applications in flexible devices.
format Online
Article
Text
id pubmed-10221160
institution National Center for Biotechnology Information
language English
publishDate 2023
publisher MDPI
record_format MEDLINE/PubMed
spelling pubmed-102211602023-05-28 Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics Hu, Guangliang Shen, Yinchang Shen, Lvkang Ma, Chunrui Liu, Ming Materials (Basel) Article In this work, we explored the potential of the ferroelectric gate of (Pb(0.92)La(0.08))(Zr(0.30)Ti(0.70))O(3) (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices. Based on the deep understanding of the V(Dirac) of PLZT(8/30/70) gate GFET, which determines the application of the flexible GFET devices, the polarization mechanisms of PLZT(8/30/70) under bending deformation were analyzed. It was found that both flexoelectric polarization and piezoelectric polarization exist under bending deformation, and their polarization direction is opposite under the same bending deformation. Thus, a relatively stable of V(Dirac) is obtained due to the combination of these two effects. In contrast to the relatively good linear movement of V(Dirac) under bending deformation of relaxor ferroelectric (Pb(0.92)La(0.08))(Zr(0.52)Ti(0.48))O(3) (PLZT(8/52/48)) gated GFET, these stable properties of the PLZT(8/30/70) gate GFETs make them have great potential for applications in flexible devices. MDPI 2023-05-17 /pmc/articles/PMC10221160/ /pubmed/37241425 http://dx.doi.org/10.3390/ma16103798 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Hu, Guangliang
Shen, Yinchang
Shen, Lvkang
Ma, Chunrui
Liu, Ming
Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics
title Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics
title_full Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics
title_fullStr Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics
title_full_unstemmed Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics
title_short Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics
title_sort bending stability of ferroelectric gated graphene field effect transistor for flexible electronics
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221160/
https://www.ncbi.nlm.nih.gov/pubmed/37241425
http://dx.doi.org/10.3390/ma16103798
work_keys_str_mv AT huguangliang bendingstabilityofferroelectricgatedgraphenefieldeffecttransistorforflexibleelectronics
AT shenyinchang bendingstabilityofferroelectricgatedgraphenefieldeffecttransistorforflexibleelectronics
AT shenlvkang bendingstabilityofferroelectricgatedgraphenefieldeffecttransistorforflexibleelectronics
AT machunrui bendingstabilityofferroelectricgatedgraphenefieldeffecttransistorforflexibleelectronics
AT liuming bendingstabilityofferroelectricgatedgraphenefieldeffecttransistorforflexibleelectronics