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Bending Stability of Ferroelectric Gated Graphene Field Effect Transistor for Flexible Electronics
In this work, we explored the potential of the ferroelectric gate of (Pb(0.92)La(0.08))(Zr(0.30)Ti(0.70))O(3) (PLZT(8/30/70)) for flexible graphene field effect transistor (GFET) devices. Based on the deep understanding of the V(Dirac) of PLZT(8/30/70) gate GFET, which determines the application of...
Autores principales: | Hu, Guangliang, Shen, Yinchang, Shen, Lvkang, Ma, Chunrui, Liu, Ming |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221160/ https://www.ncbi.nlm.nih.gov/pubmed/37241425 http://dx.doi.org/10.3390/ma16103798 |
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