Temperature-Dependent Carrier Transport in GaN Nanowire Wrap-Gate Transistor

For the creation of next-generation nanoscale devices, it is crucial to comprehend the carrier transport mechanisms in nanowires. Here, we examine how temperature affects the properties of GaN nanowire wrap-gate transistors (WGTs), which are made via a top-down technique. The predicted conductance i...

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Detalles Bibliográficos
Autores principales: Mallem, Siva Pratap Reddy, Puneetha, Peddathimula, Choi, Yeojin, Baek, Seung Mun, An, Sung Jin, Im, Ki-Sik
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221225/
https://www.ncbi.nlm.nih.gov/pubmed/37242044
http://dx.doi.org/10.3390/nano13101629

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221225/
https://www.ncbi.nlm.nih.gov/pubmed/37242044
http://dx.doi.org/10.3390/nano13101629

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