Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light. To solve this problem, we processed p-GaN gate HEMTs with transparent indium tin oxide (ITO) as the gate terminal...

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Detalles Bibliográficos
Autores principales: Han, Zhanfei, Li, Xiangdong, Wang, Hongyue, Yuan, Jiahui, Wang, Junbo, Wang, Meng, Yang, Weitao, You, Shuzhen, Chang, Jingjing, Zhang, Jincheng, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221805/
https://www.ncbi.nlm.nih.gov/pubmed/37241564
http://dx.doi.org/10.3390/mi14050940

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221805/
https://www.ncbi.nlm.nih.gov/pubmed/37241564
http://dx.doi.org/10.3390/mi14050940

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