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Investigating the Failure Mechanism of p-GaN Gate HEMTs under High Power Stress with a Transparent ITO Gate

The channel temperature distribution and breakdown points are difficult to monitor for the traditional p-GaN gate HEMTs under high power stress, because the metal gate blocks the light. To solve this problem, we processed p-GaN gate HEMTs with transparent indium tin oxide (ITO) as the gate terminal...

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Detalles Bibliográficos
Autores principales:	Han, Zhanfei, Li, Xiangdong, Wang, Hongyue, Yuan, Jiahui, Wang, Junbo, Wang, Meng, Yang, Weitao, You, Shuzhen, Chang, Jingjing, Zhang, Jincheng, Hao, Yue
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221805/ https://www.ncbi.nlm.nih.gov/pubmed/37241564 http://dx.doi.org/10.3390/mi14050940

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