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A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor

This paper proposes a piezoresistive high-temperature absolute pressure sensor based on (100)/(111) hybrid SOI (silicon-on-insulator) silicon wafers, where the active layer is (100) silicon and the handle layer is (111) silicon. The 1.5 MPa ranged sensor chips are designed with the size as tiny as 0...

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Detalles Bibliográficos
Autores principales: Li, Peng, Li, Wei, Chen, Changnan, Wu, Sheng, Pan, Pichao, Sun, Ke, Liu, Min, Wang, Jiachou, Li, Xinxin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221922/
https://www.ncbi.nlm.nih.gov/pubmed/37241606
http://dx.doi.org/10.3390/mi14050981
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author Li, Peng
Li, Wei
Chen, Changnan
Wu, Sheng
Pan, Pichao
Sun, Ke
Liu, Min
Wang, Jiachou
Li, Xinxin
author_facet Li, Peng
Li, Wei
Chen, Changnan
Wu, Sheng
Pan, Pichao
Sun, Ke
Liu, Min
Wang, Jiachou
Li, Xinxin
author_sort Li, Peng
collection PubMed
description This paper proposes a piezoresistive high-temperature absolute pressure sensor based on (100)/(111) hybrid SOI (silicon-on-insulator) silicon wafers, where the active layer is (100) silicon and the handle layer is (111) silicon. The 1.5 MPa ranged sensor chips are designed with the size as tiny as 0.5 × 0.5 mm, and the chips are fabricated only from the front side of the wafer for simple, high-yield and low-cost batch production. Herein, the (100) active layer is specifically used to form high-performance piezoresistors for high-temperature pressure sensing, while the (111) handle layer is used to single-side construct the pressure-sensing diaphragm and the pressure-reference cavity beneath the diaphragm. Benefitting from front-sided shallow dry etching and self-stop lateral wet etching inside the (111)-silicon substrate, the thickness of the pressure-sensing diaphragm is uniform and controllable, and the pressure-reference cavity is embedded into the handle layer of (111) silicon. Without the conventionally used double-sided etching, wafer bonding and cavity-SOI manufacturing, a very small sensor chip size of 0.5 × 0.5 mm is achieved. The measured performance of the 1.5 MPa ranged pressure sensor exhibits a full-scale output of approximately 59.55 mV/1500 kPa/3.3 VDC in room temperature and a high overall accuracy (combined with hysteresis, non-linearity and repeatability) of 0.17%FS within the temperature range of −55 °C to 350 °C. In addition, the thermal hysteresis is also evaluated as approximately 0.15%FS at 350 °C. The tiny-sized high temperature pressure sensors are promising in various industrial automatic control applications and wind tunnel testing systems.
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spelling pubmed-102219222023-05-28 A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor Li, Peng Li, Wei Chen, Changnan Wu, Sheng Pan, Pichao Sun, Ke Liu, Min Wang, Jiachou Li, Xinxin Micromachines (Basel) Article This paper proposes a piezoresistive high-temperature absolute pressure sensor based on (100)/(111) hybrid SOI (silicon-on-insulator) silicon wafers, where the active layer is (100) silicon and the handle layer is (111) silicon. The 1.5 MPa ranged sensor chips are designed with the size as tiny as 0.5 × 0.5 mm, and the chips are fabricated only from the front side of the wafer for simple, high-yield and low-cost batch production. Herein, the (100) active layer is specifically used to form high-performance piezoresistors for high-temperature pressure sensing, while the (111) handle layer is used to single-side construct the pressure-sensing diaphragm and the pressure-reference cavity beneath the diaphragm. Benefitting from front-sided shallow dry etching and self-stop lateral wet etching inside the (111)-silicon substrate, the thickness of the pressure-sensing diaphragm is uniform and controllable, and the pressure-reference cavity is embedded into the handle layer of (111) silicon. Without the conventionally used double-sided etching, wafer bonding and cavity-SOI manufacturing, a very small sensor chip size of 0.5 × 0.5 mm is achieved. The measured performance of the 1.5 MPa ranged pressure sensor exhibits a full-scale output of approximately 59.55 mV/1500 kPa/3.3 VDC in room temperature and a high overall accuracy (combined with hysteresis, non-linearity and repeatability) of 0.17%FS within the temperature range of −55 °C to 350 °C. In addition, the thermal hysteresis is also evaluated as approximately 0.15%FS at 350 °C. The tiny-sized high temperature pressure sensors are promising in various industrial automatic control applications and wind tunnel testing systems. MDPI 2023-04-29 /pmc/articles/PMC10221922/ /pubmed/37241606 http://dx.doi.org/10.3390/mi14050981 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Li, Peng
Li, Wei
Chen, Changnan
Wu, Sheng
Pan, Pichao
Sun, Ke
Liu, Min
Wang, Jiachou
Li, Xinxin
A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor
title A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor
title_full A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor
title_fullStr A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor
title_full_unstemmed A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor
title_short A Single-Side Micromachined MPa-Scale High-Temperature Pressure Sensor
title_sort single-side micromachined mpa-scale high-temperature pressure sensor
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10221922/
https://www.ncbi.nlm.nih.gov/pubmed/37241606
http://dx.doi.org/10.3390/mi14050981
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