Contribution of Ion Energy and Flux on High-Aspect Ratio SiO(2) Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C(4)F(8) Plasma: Individual Ion Energy and Flux Controlled

As the process complexity has been increased to overcome challenges in plasma etching, individual control of internal plasma parameters for process optimization has attracted attention. This study investigated the individual contribution of internal parameters, the ion energy and flux, on high-aspec...

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Detalles Bibliográficos
Autores principales: Jeong, Wonnyoung, Kim, Sijun, Lee, Youngseok, Cho, Chulhee, Seong, Inho, You, Yebin, Choi, Minsu, Lee, Jangjae, Seol, Youbin, You, Shinjae
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222222/
https://www.ncbi.nlm.nih.gov/pubmed/37241447
http://dx.doi.org/10.3390/ma16103820

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222222/
https://www.ncbi.nlm.nih.gov/pubmed/37241447
http://dx.doi.org/10.3390/ma16103820

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