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Contribution of Ion Energy and Flux on High-Aspect Ratio SiO(2) Etching Characteristics in a Dual-Frequency Capacitively Coupled Ar/C(4)F(8) Plasma: Individual Ion Energy and Flux Controlled
As the process complexity has been increased to overcome challenges in plasma etching, individual control of internal plasma parameters for process optimization has attracted attention. This study investigated the individual contribution of internal parameters, the ion energy and flux, on high-aspec...
| Autores principales: | , , , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222222/ https://www.ncbi.nlm.nih.gov/pubmed/37241447 http://dx.doi.org/10.3390/ma16103820 |