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A 0.6 V(IN) 100 mV Dropout Capacitor-Less LDO with 220 nA I(Q) for Energy Harvesting System

A fully integrated and high-efficiency low-dropout regulator (LDO) with 100 mV dropout voltage and nA-level quiescent current for energy harvesting has been proposed and simulated in the 180 nm CMOS process in this paper. A bulk modulation without an extra amplifier is proposed, which decreases the...

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Detalles Bibliográficos
Autores principales: Zhang, Yuting, Ge, Qianhui, Zeng, Yanhan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222239/
https://www.ncbi.nlm.nih.gov/pubmed/37241622
http://dx.doi.org/10.3390/mi14050998