Analysis of Trapping Effect on Large-Signal Characteristics of GaN HEMTs Using X-Parameters and UV Illumination

GaN high-electron-mobility transistors (HEMTs) have attracted widespread attention for high-power microwave applications, owing to their superior properties. However, the charge trapping effect has limitations to its performance. To study the trapping effect on the device large-signal behavior, AlGa...

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Detalles Bibliográficos
Autores principales: Chen, Kun-Ming, Lin, Chuang-Ju, Chuang, Chia-Wei, Pai, Hsuan-Cheng, Chang, Edward-Yi, Huang, Guo-Wei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222734/
https://www.ncbi.nlm.nih.gov/pubmed/37241634
http://dx.doi.org/10.3390/mi14051011

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222734/
https://www.ncbi.nlm.nih.gov/pubmed/37241634
http://dx.doi.org/10.3390/mi14051011

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