Cargando…

Structural Analysis of Mo Thin Films on Sapphire Substrates for Epitaxial Growth of AlN

Aluminum nitride (AlN) thin film/molybdenum (Mo) electrode structures are typically required in microelectromechanical system applications. However, the growth of highly crystalline and c-axis-oriented AlN thin films on Mo electrodes remains challenging. In this study, we demonstrate the epitaxial g...

Descripción completa

Detalles Bibliográficos
Autores principales:	Kim, Jihong, Kim, Youngil, Hong, Sung-Min
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222929/ https://www.ncbi.nlm.nih.gov/pubmed/37241589 http://dx.doi.org/10.3390/mi14050966

Ejemplares similares

Epitaxial Growth of GaN on Magnetron Sputtered AlN/Hexagonal BN/Sapphire Substrates
por: Wu, Jinxing, et al.
Publicado: (2020)

Improved Crystallinity of Annealed 0002 AlN Films on Sapphire Substrate
por: Bersch, Bruno Comis, et al.
Publicado: (2023)

High-quality AlN epitaxy on nano-patterned sapphire substrates prepared by nano-imprint lithography
por: Zhang, Lisheng, et al.
Publicado: (2016)

The Effect of Nitridation on Sputtering AlN on Composited Patterned Sapphire Substrate
por: Zhang, Yi, et al.
Publicado: (2023)

Direct van der Waals Epitaxy of Crack-Free AlN Thin Film on Epitaxial WS(2)
por: Yin, Yue, et al.
Publicado: (2018)

Micro- and Nanostructure Analysis of Vapor-Phase-Grown AlN on Face-to-Face Annealed Sputtered AlN/Nanopatterned Sapphire Substrate Templates
por: Nakanishi, Yudai, et al.
Publicado: (2023)

Structural and Stress Properties of AlGaN Epilayers Grown on AlN-Nanopatterned Sapphire Templates by Hydride Vapor Phase Epitaxy
por: Tasi, Chi-Tsung, et al.
Publicado: (2018)

Layer matching epitaxy of NiO thin films on atomically stepped sapphire (0001) substrates
por: Yamauchi, Ryosuke, et al.
Publicado: (2015)

N-polar GaN Film Epitaxy on Sapphire Substrate without Intentional Nitridation
por: Su, Zhaole, et al.
Publicado: (2022)

Heteroepitaxial Growth of High-Quality and Crack-Free AlN Film on Sapphire Substrate with Nanometer-Scale-Thick AlN Nucleation Layer for AlGaN-Based Deep Ultraviolet Light-Emitting Diodes
por: Zhao, Jie, et al.
Publicado: (2019)

Laser Ultrasound Investigations of AlScN(0001) and AlScN(11-20) Thin Films Prepared by Magnetron Sputter Epitaxy on Sapphire Substrates
por: Mayer, Elena A., et al.
Publicado: (2022)

Impact of Defects for AlN Single Crystal Thin Film by Metal Nitride Vapor Phase Epitaxy
por: Xie, Luxiao, et al.
Publicado: (2022)

Berkovich Nanoindentation on AlN Thin Films
por: Jian, Sheng-Rui, et al.
Publicado: (2010)

AlN/InAlN thin-film transistors fabricated on glass substrates at room temperature
por: Nakamura, Kyohei, et al.
Publicado: (2019)

Nucleation and growth of (10(¯)11) semi-polar AlN on (0001) AlN by Hydride Vapor Phase Epitaxy
por: Liu, Ting, et al.
Publicado: (2016)

Polarity Control of an All-Sputtered Epitaxial GaN/AlN/Al Film on a Si(111) Substrate by Intermediate Oxidization
por: Nagata, Takahiro, et al.
Publicado: (2022)

Facile Au-assisted epitaxy of nearly strain-free GaN films on sapphire substrates
por: Li, Pengkun, et al.
Publicado: (2020)

AlN Nanowall Structures Grown on Si (111) Substrate by Molecular Beam Epitaxy
por: Tamura, Yosuke, et al.
Publicado: (2015)

Epitaxial Growth of Sc(0.09)Al(0.91)N and Sc(0.18)Al(0.82)N Thin Films on Sapphire Substrates by Magnetron Sputtering for Surface Acoustic Waves Applications
por: Bartoli, Florian, et al.
Publicado: (2020)

Preparation, Characterization, and Application of AlN/ScAlN Composite Thin Films
por: Nian, Laixia, et al.
Publicado: (2023)

Interfacial reaction control and its mechanism of AlN epitaxial films grown on Si(111) substrates by pulsed laser deposition
por: Wang, Wenliang, et al.
Publicado: (2015)

High Lateral Breakdown Voltage in Thin Channel AlGaN/GaN High Electron Mobility Transistors on AlN/Sapphire Templates
por: Abid, Idriss, et al.
Publicado: (2019)

Intentional polarity conversion of AlN epitaxial layers by oxygen
por: Stolyarchuk, N., et al.
Publicado: (2018)

Growth of Semi-Polar (10 [Formula: see text] 3) AlN Film on M-Plane Sapphire with High-Temperature Nitridation by HVPE
por: Li, Xu, et al.
Publicado: (2021)

Reduction of Defects in AlGaN Grown on Nanoscale-Patterned Sapphire Substrates by Hydride Vapor Phase Epitaxy
por: Tasi, Chi-Tsung, et al.
Publicado: (2017)

Dislocation Energetics and Pop-Ins in AlN Thin Films by Berkovich Nanoindentation
por: Jian, Sheng-Rui, et al.
Publicado: (2013)

Substrate Temperature Dependent Properties of Sputtered AlN:Er Thin Film for In-Situ Luminescence Sensing of Al/AlN Multilayer Coating Health
por: Fang, Liping, et al.
Publicado: (2018)

Studies of Defect Structure in Epitaxial AlN/GaN Films Grown on (111) 3C-SiC
por: Serban, Andreea Bianca, et al.
Publicado: (2021)

Large-Area MoS(2) Films Grown on Sapphire and GaN Substrates by Pulsed Laser Deposition
por: Španková, Marianna, et al.
Publicado: (2023)

Microstructures and growth mechanisms of GaN films epitaxially grown on AlN/Si hetero-structures by pulsed laser deposition at different temperatures
por: Wang, Wenliang, et al.
Publicado: (2015)

Efficiency improvement of GaN-based ultraviolet light-emitting diodes with reactive plasma deposited AlN nucleation layer on patterned sapphire substrate
por: Lee, Chia-Yu, et al.
Publicado: (2014)

High quality AlN epilayers grown on nitrided sapphire by metal organic chemical vapor deposition
por: Wang, Jiaming, et al.
Publicado: (2017)

Fabrication of Weak C-Axis Preferred AlN Thin Film for Temperature Measurement
por: Dong, Ling, et al.
Publicado: (2021)

MBE Growth of AlN Nanowires on Si Substrates by Aluminizing Nucleation
por: E, Yanxiong, et al.
Publicado: (2015)

Structural and Photoelectric Properties of Epitaxially Grown Vanadium Dioxide Thin Films on c-Plane Sapphire and Titanium Dioxide
por: Creeden, Jason A., et al.
Publicado: (2019)

High growth temperature for AlN by jet stream gas flow metalorganic vapor phase epitaxy
por: Nagamatsu, Kentaro, et al.
Publicado: (2023)

Epitaxial Catalyst-Free Growth of InN Nanorods onc-Plane Sapphire
por: Shalish, I, et al.
Publicado: (2009)

Low-temperature atomic layer epitaxy of AlN ultrathin films by layer-by-layer, in-situ atomic layer annealing
por: Shih, Huan-Yu, et al.
Publicado: (2017)

Effect of strain relaxation on performance of InGaN/GaN green LEDs grown on 4-inch sapphire substrate with sputtered AlN nucleation layer
por: Hu, Hongpo, et al.
Publicado: (2019)

Highly Homogeneous Current Transport in Ultra-Thin Aluminum Nitride (AlN) Epitaxial Films on Gallium Nitride (GaN) Deposited by Plasma Enhanced Atomic Layer Deposition
por: Schilirò, Emanuela, et al.
Publicado: (2021)

Cannot write session to /tmp/vufind_sessions/sess_turdu0a4ai026eg1p4shv9stp5