Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the threshold voltage (V(TH)) of HEMTs under BTI s...

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Detalles Bibliográficos
Autores principales: Li, Xiangdong, Wang, Meng, Zhang, Jincheng, Gao, Rui, Wang, Hongyue, Yang, Weitao, Yuan, Jiahui, You, Shuzhen, Chang, Jingjing, Liu, Zhihong, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222964/
https://www.ncbi.nlm.nih.gov/pubmed/37241665
http://dx.doi.org/10.3390/mi14051042

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222964/
https://www.ncbi.nlm.nih.gov/pubmed/37241665
http://dx.doi.org/10.3390/mi14051042

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