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Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization

The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the threshold voltage (V(TH)) of HEMTs under BTI s...

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Autores principales: Li, Xiangdong, Wang, Meng, Zhang, Jincheng, Gao, Rui, Wang, Hongyue, Yang, Weitao, Yuan, Jiahui, You, Shuzhen, Chang, Jingjing, Liu, Zhihong, Hao, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222964/
https://www.ncbi.nlm.nih.gov/pubmed/37241665
http://dx.doi.org/10.3390/mi14051042
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author Li, Xiangdong
Wang, Meng
Zhang, Jincheng
Gao, Rui
Wang, Hongyue
Yang, Weitao
Yuan, Jiahui
You, Shuzhen
Chang, Jingjing
Liu, Zhihong
Hao, Yue
author_facet Li, Xiangdong
Wang, Meng
Zhang, Jincheng
Gao, Rui
Wang, Hongyue
Yang, Weitao
Yuan, Jiahui
You, Shuzhen
Chang, Jingjing
Liu, Zhihong
Hao, Yue
author_sort Li, Xiangdong
collection PubMed
description The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the threshold voltage (V(TH)) of HEMTs under BTI stress by fast sweeping characterizations. The HEMTs without time-dependent gate breakdown (TDGB) stress featured a high V(TH) shift of 0.62 V. In contrast, the HEMT that underwent 424 s of TDGB stress clearly saw a limited V(TH) shift of 0.16 V. The mechanism is that the TDGB stress can induce a Schottky barrier lowering effect on the metal/p-GaN junction, thus boosting the hole injection from the gate metal to the p-GaN layer. This hole injection eventually improves the V(TH) stability by replenishing the holes lost under BTI stress. It is the first time that we experimentally proved that the BTI effect of p-GaN gate HEMTs was directly dominated by the gate Schottky barrier that impeded the hole supply to the p-GaN layer.
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spelling pubmed-102229642023-05-28 Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization Li, Xiangdong Wang, Meng Zhang, Jincheng Gao, Rui Wang, Hongyue Yang, Weitao Yuan, Jiahui You, Shuzhen Chang, Jingjing Liu, Zhihong Hao, Yue Micromachines (Basel) Article The bias temperature instability (BTI) effect of p-GaN gate high-electron-mobility transistors (HEMTs) is a serious problem for reliability. To uncover the essential cause of this effect, in this paper, we precisely monitored the shifting process of the threshold voltage (V(TH)) of HEMTs under BTI stress by fast sweeping characterizations. The HEMTs without time-dependent gate breakdown (TDGB) stress featured a high V(TH) shift of 0.62 V. In contrast, the HEMT that underwent 424 s of TDGB stress clearly saw a limited V(TH) shift of 0.16 V. The mechanism is that the TDGB stress can induce a Schottky barrier lowering effect on the metal/p-GaN junction, thus boosting the hole injection from the gate metal to the p-GaN layer. This hole injection eventually improves the V(TH) stability by replenishing the holes lost under BTI stress. It is the first time that we experimentally proved that the BTI effect of p-GaN gate HEMTs was directly dominated by the gate Schottky barrier that impeded the hole supply to the p-GaN layer. MDPI 2023-05-12 /pmc/articles/PMC10222964/ /pubmed/37241665 http://dx.doi.org/10.3390/mi14051042 Text en © 2023 by the authors. https://creativecommons.org/licenses/by/4.0/Licensee MDPI, Basel, Switzerland. This article is an open access article distributed under the terms and conditions of the Creative Commons Attribution (CC BY) license (https://creativecommons.org/licenses/by/4.0/).
spellingShingle Article
Li, Xiangdong
Wang, Meng
Zhang, Jincheng
Gao, Rui
Wang, Hongyue
Yang, Weitao
Yuan, Jiahui
You, Shuzhen
Chang, Jingjing
Liu, Zhihong
Hao, Yue
Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization
title Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization
title_full Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization
title_fullStr Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization
title_full_unstemmed Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization
title_short Revealing the Mechanism of the Bias Temperature Instability Effect of p-GaN Gate HEMTs by Time-Dependent Gate Breakdown Stress and Fast Sweeping Characterization
title_sort revealing the mechanism of the bias temperature instability effect of p-gan gate hemts by time-dependent gate breakdown stress and fast sweeping characterization
topic Article
url https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10222964/
https://www.ncbi.nlm.nih.gov/pubmed/37241665
http://dx.doi.org/10.3390/mi14051042
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