LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K

We describe in detail the construction and characterization of a Peltier-cooled long-wavelength infrared (LWIR) position-sensitive detector (PSD) based on the lateral effect. The device was recently reported for the first time to the authors’ knowledge. It is a modified PIN HgCdTe photodiode, formin...

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Detalles Bibliográficos
Autores principales: Pawluczyk, Jarosław, Żbik, Mateusz, Piotrowski, Józef
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10223494/
https://www.ncbi.nlm.nih.gov/pubmed/37430828
http://dx.doi.org/10.3390/s23104915

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10223494/
https://www.ncbi.nlm.nih.gov/pubmed/37430828
http://dx.doi.org/10.3390/s23104915

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