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LWIR Lateral Effect Position Sensitive HgCdTe Photodetector at 205 K
We describe in detail the construction and characterization of a Peltier-cooled long-wavelength infrared (LWIR) position-sensitive detector (PSD) based on the lateral effect. The device was recently reported for the first time to the authors’ knowledge. It is a modified PIN HgCdTe photodiode, formin...
Autores principales: | , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10223494/ https://www.ncbi.nlm.nih.gov/pubmed/37430828 http://dx.doi.org/10.3390/s23104915 |
Sumario: | We describe in detail the construction and characterization of a Peltier-cooled long-wavelength infrared (LWIR) position-sensitive detector (PSD) based on the lateral effect. The device was recently reported for the first time to the authors’ knowledge. It is a modified PIN HgCdTe photodiode, forming the tetra-lateral PSD, with a photosensitive area of 1 × 1 mm(2), operating at 205 K in the 3–11 µm spectral range, capable of achieving a position resolution of 0.3–0.6 µm using 10.5 µm 2.6 mW radiation focused on a spot of the 1/e(2) diameter 240 µm, with a box-car integration time of 1 µs and correlated double sampling. |
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