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X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology
This paper describes Monolithic Microwave Integrated Circuits (MMICs) for an X-band radar transceiver front-end implemented in 0.25 μm GaN High Electron Mobility Transistor (HEMT) technology. Two versions of single pole double throw (SPDT) T/R switches are introduced to realize a fully GaN-based tra...
Autores principales: | , , , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10223916/ https://www.ncbi.nlm.nih.gov/pubmed/37430754 http://dx.doi.org/10.3390/s23104840 |