X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology

This paper describes Monolithic Microwave Integrated Circuits (MMICs) for an X-band radar transceiver front-end implemented in 0.25 μm GaN High Electron Mobility Transistor (HEMT) technology. Two versions of single pole double throw (SPDT) T/R switches are introduced to realize a fully GaN-based tra...

Descripción completa

Detalles Bibliográficos
Autores principales: Lee, Hyeonseok, Park, Hyeong-Geun, Le, Van-Du, Nguyen, Van-Phu, Song, Jeong-Moon, Lee, Bok-Hyung, Park, Jung-Dong
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10223916/
https://www.ncbi.nlm.nih.gov/pubmed/37430754
http://dx.doi.org/10.3390/s23104840

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10223916/
https://www.ncbi.nlm.nih.gov/pubmed/37430754
http://dx.doi.org/10.3390/s23104840

Ejemplares similares