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X-band MMICs for a Low-Cost Radar Transmit/Receive Module in 250 nm GaN HEMT Technology

This paper describes Monolithic Microwave Integrated Circuits (MMICs) for an X-band radar transceiver front-end implemented in 0.25 μm GaN High Electron Mobility Transistor (HEMT) technology. Two versions of single pole double throw (SPDT) T/R switches are introduced to realize a fully GaN-based tra...

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Detalles Bibliográficos
Autores principales:	Lee, Hyeonseok, Park, Hyeong-Geun, Le, Van-Du, Nguyen, Van-Phu, Song, Jeong-Moon, Lee, Bok-Hyung, Park, Jung-Dong
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	MDPI 2023
Materias:	Article
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10223916/ https://www.ncbi.nlm.nih.gov/pubmed/37430754 http://dx.doi.org/10.3390/s23104840

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