Different Crystallization Behavior of Amorphous ITO Film by Rapid Infrared Annealing and Conventional Furnace Annealing Technology

An amorphous indium tin oxide (ITO) film (Ar/O(2) = 80:0.5) was heated to 400 °C and maintained for 1–9 min using rapid infrared annealing (RIA) technology and conventional furnace annealing (CFA) technology. The effect of holding time on the structure, optical and electrical properties, and crystal...

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Detalles Bibliográficos
Autores principales: Li, Jiaming, Jiang, Liangbao, Li, Xiaoyu, Luo, Junjie, Liu, Jiaxi, Wang, Minbo, Yan, Yue
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10224407/
https://www.ncbi.nlm.nih.gov/pubmed/37241430
http://dx.doi.org/10.3390/ma16103803

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10224407/
https://www.ncbi.nlm.nih.gov/pubmed/37241430
http://dx.doi.org/10.3390/ma16103803

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