Improved Endurance of Ferroelectric Hf(0.5)Zr(0.5)O(2) Using Laminated-Structure Interlayer

In this article, the endurance characteristic of the TiN/HZO/TiN capacitor was improved by the laminated structure of a ferroelectric Hf(0.5)Zr(0.5)O(2) thin film. Altering the HZO deposition ratio, the laminated-structure interlayer was formed in the middle of the HZO film. Although small remanent...

Descripción completa

Detalles Bibliográficos
Autores principales: Chen, Meiwen, Lv, Shuxian, Wang, Boping, Jiang, Pengfei, Chen, Yuanxiang, Ding, Yaxin, Wang, Yuan, Chen, Yuting, Wang, Yan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10224430/
https://www.ncbi.nlm.nih.gov/pubmed/37242025
http://dx.doi.org/10.3390/nano13101608

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10224430/
https://www.ncbi.nlm.nih.gov/pubmed/37242025
http://dx.doi.org/10.3390/nano13101608

Ejemplares similares