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Effect of Hydrogen Annealing on Performances of BN-Based RRAM
BN-based resistive random-access memory (RRAM) has emerged as a potential candidate for non-volatile memory (NVM) in aerospace applications, offering high thermal conductivity, excellent mechanical, and chemical stability, low power consumption, high density, and reliability. However, the presence o...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10224539/ https://www.ncbi.nlm.nih.gov/pubmed/37242080 http://dx.doi.org/10.3390/nano13101665 |