Dephasing by optical phonons in GaN defect single-photon emitters

Single-photon defect emitters (SPEs), especially those with magnetically and optically addressable spin states, in technologically mature wide bandgap semiconductors are attractive for realizing integrated platforms for quantum applications. Broadening of the zero phonon line (ZPL) caused by dephasi...

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Detalles Bibliográficos
Autores principales: Geng, Yifei, Luo, Jialun, van Deurzen, Len, Xing, Huili (Grace), Jena, Debdeep, Fuchs, Gregory David, Rana, Farhan
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10227053/
https://www.ncbi.nlm.nih.gov/pubmed/37248283
http://dx.doi.org/10.1038/s41598-023-35003-z

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10227053/
https://www.ncbi.nlm.nih.gov/pubmed/37248283
http://dx.doi.org/10.1038/s41598-023-35003-z

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