A New Analytical Large-Signal Model for Quasi-Ballistic Transport in InGaAs HEMTs Accommodating Dislocation Scattering

A surface-potential-based analytical large-signal model, which is applicable to both ballistic and quasi-ballistic transport in InGaAs high electron mobility transistors, is developed. Based on the one-flux method and a new transmission coefficient, a new two-dimensional electron gas charge density...

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Detalles Bibliográficos
Autores principales: Wang, Jinye, Liu, Jun, Wang, Jie, Zhao, Zhenxin
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10228375/
https://www.ncbi.nlm.nih.gov/pubmed/37241646
http://dx.doi.org/10.3390/mi14051023

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10228375/
https://www.ncbi.nlm.nih.gov/pubmed/37241646
http://dx.doi.org/10.3390/mi14051023

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