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A New Analytical Large-Signal Model for Quasi-Ballistic Transport in InGaAs HEMTs Accommodating Dislocation Scattering
A surface-potential-based analytical large-signal model, which is applicable to both ballistic and quasi-ballistic transport in InGaAs high electron mobility transistors, is developed. Based on the one-flux method and a new transmission coefficient, a new two-dimensional electron gas charge density...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
MDPI
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10228375/ https://www.ncbi.nlm.nih.gov/pubmed/37241646 http://dx.doi.org/10.3390/mi14051023 |