Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer

The ability to configure the optimal buffer layer for GaN growth depends on the knowledge of relaxation processes that occurs during the cooling step while countering the tensile stresses due to the contrast of thermal expansion coefficient between GaN and Si(111) substrate. Here, we inaugurate the...

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Detalles Bibliográficos
Autores principales: Mansor, Marwan, Norhaniza, Rizuan, Shuhaimi, Ahmad, Hisyam, Muhammad Iznul, Omar, Al-Zuhairi, Williams, Adam, Mat Hussin, Mohd Rofei
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10232405/
https://www.ncbi.nlm.nih.gov/pubmed/37258537
http://dx.doi.org/10.1038/s41598-023-35677-5

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10232405/
https://www.ncbi.nlm.nih.gov/pubmed/37258537
http://dx.doi.org/10.1038/s41598-023-35677-5

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