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Enhancement of gallium nitride on silicon (111) using pulse atomic-layer epitaxy (PALE) AlN with composition-graded AlGaN buffer
The ability to configure the optimal buffer layer for GaN growth depends on the knowledge of relaxation processes that occurs during the cooling step while countering the tensile stresses due to the contrast of thermal expansion coefficient between GaN and Si(111) substrate. Here, we inaugurate the...
| Autores principales: | , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10232405/ https://www.ncbi.nlm.nih.gov/pubmed/37258537 http://dx.doi.org/10.1038/s41598-023-35677-5 |