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Schottky barrier height engineering on MoS(2) field-effect transistors using a polymer surface modifier on a contact electrode
Two-dimensional (2D) materials are highly sought after for their superior semiconducting properties, making them promising candidates for next-generation electronic and optoelectronic devices. Transition-metal dichalcogenides (TMDCs), such as molybdenum disulfide (MoS(2)) and tungsten diselenide (WS...
Autores principales: | , , , , |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Springer US
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10232713/ https://www.ncbi.nlm.nih.gov/pubmed/37382714 http://dx.doi.org/10.1186/s11671-023-03855-z |