Cargando…

Schottky barrier height engineering on MoS(2) field-effect transistors using a polymer surface modifier on a contact electrode

Two-dimensional (2D) materials are highly sought after for their superior semiconducting properties, making them promising candidates for next-generation electronic and optoelectronic devices. Transition-metal dichalcogenides (TMDCs), such as molybdenum disulfide (MoS(2)) and tungsten diselenide (WS...

Descripción completa

Detalles Bibliográficos
Autores principales:	Choi, Dongwon, Jeon, Jeehoon, Park, Tae-Eon, Ju, Byeong-Kwon, Lee, Ki-Young
Formato:	Online Artículo Texto
Lenguaje:	English
Publicado:	Springer US 2023
Materias:	Research
Acceso en línea:	https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10232713/ https://www.ncbi.nlm.nih.gov/pubmed/37382714 http://dx.doi.org/10.1186/s11671-023-03855-z

Ejemplares similares

Monolayer MoS(2) field effect transistor with low Schottky barrier height with ferromagnetic metal contacts
por: Gupta, Sachin, et al.
Publicado: (2019)

Schottky Barrier Height and Image Force Lowering in Monolayer MoS(2) Field Effect Transistors
por: Vaknin, Yonatan, et al.
Publicado: (2020)

Tuning Schottky Barrier of Single-Layer MoS(2) Field-Effect Transistors with Graphene Electrodes
por: Jang, A-Rang
Publicado: (2022)

Novel Field-Effect Schottky Barrier Transistors Based on Graphene-MoS(2) Heterojunctions
por: Tian, He, et al.
Publicado: (2014)

Electrically Tunable and Negative Schottky Barriers in Multi-layered Graphene/MoS(2) Heterostructured Transistors
por: Qiu, Dongri, et al.
Publicado: (2015)

Controllable Schottky Barriers between MoS(2) and Permalloy
por: Wang, Weiyi, et al.
Publicado: (2014)

Selective Laser-Assisted Direct Synthesis of MoS(2) for Graphene/MoS(2) Schottky Junction
por: Jeon, Min Ji, et al.
Publicado: (2023)

Black Phosphorus Transistors with Near Band Edge Contact Schottky Barrier
por: Ling, Zhi-Peng, et al.
Publicado: (2015)

The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS(2) heterojunction: a first-principles study
por: Sorkin, Viacheslav, et al.
Publicado: (2022)

Layer dependence and gas molecule absorption property in MoS(2) Schottky diode with asymmetric metal contacts
por: Yoon, Hyong Seo, et al.
Publicado: (2015)

Understanding contact gating in Schottky barrier transistors from 2D channels
por: Prakash, Abhijith, et al.
Publicado: (2017)

Reduced Fermi Level Pinning at Physisorptive Sites of Moire-MoS(2)/Metal Schottky Barriers
por: Zhang, Zhaofu, et al.
Publicado: (2022)

Author Correction: The effects of point defect type, location, and density on the Schottky barrier height of Au/MoS(2) heterojunction: a first-principles study
por: Sorkin, Viacheslav, et al.
Publicado: (2022)

Electron Irradiation of Metal Contacts in Monolayer MoS(2) Field-Effect Transistors
por: Pelella, Aniello, et al.
Publicado: (2020)

Impact of contact resistance on the electrical properties of MoS(2) transistors at practical operating temperatures
por: Giannazzo, Filippo, et al.
Publicado: (2017)

Integrated contact lens sensor system based on multifunctional ultrathin MoS(2) transistors
por: Guo, Shiqi, et al.
Publicado: (2021)

Edge-Contact MoS(2) Transistors Fabricated Using Thermal Scanning Probe Lithography
por: Conde-Rubio, Ana, et al.
Publicado: (2022)

Organic Electrochemical Transistor with MoS(2) Nanosheets Modified Gate Electrode for Sensitive Glucose Sensing
por: Hu, Jin, et al.
Publicado: (2023)

Scalability of Schottky barrier metal-oxide-semiconductor transistors
por: Jang, Moongyu
Publicado: (2016)

Electron-hole transport and photovoltaic effect in gated MoS(2) Schottky junctions
por: Fontana, Marcio, et al.
Publicado: (2013)

Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS(2) transistor
por: Li, Xiao-Xi, et al.
Publicado: (2017)

Electronic properties of MoS(2)/MoO(x) interfaces: Implications in Tunnel Field Effect Transistors and Hole Contacts
por: K. C., Santosh, et al.
Publicado: (2016)

Ultra-high Photoresponsivity in Suspended Metal-Semiconductor-Metal Mesoscopic Multilayer MoS(2) Broadband Detector from UV-to-IR with Low Schottky Barrier Contacts
por: Saenz, Gustavo A., et al.
Publicado: (2018)

On current transients in MoS(2) Field Effect Transistors
por: Macucci, Massimo, et al.
Publicado: (2017)

Stacked printed MoS(2) and Ag electrodes using electrohydrodynamic jet printing for thin-film transistors
por: Can, Thi Thu Thuy, et al.
Publicado: (2022)

Efficient MoWO(3)/VO(2)/MoS(2)/Si UV Schottky photodetectors; MoS(2) optimization and monoclinic VO(2) surface modifications
por: Basyooni, Mohamed A., et al.
Publicado: (2020)

Corrigendum: Electron-hole transport and photovoltaic effect in gated MoS(2) Schottky junctions
por: Fontana, Marcio, et al.
Publicado: (2015)

A Horizontal-Gate Monolayer MoS(2) Transistor Based on Image Force Barrier Reduction
por: Yang, Kun, et al.
Publicado: (2019)

ALD-grown two-dimensional TiS(x) metal contacts for MoS(2) field-effect transistors
por: Mahlouji, Reyhaneh, et al.
Publicado: (2023)

Multiple MoS(2) Transistors for Sensing Molecule Interaction Kinetics
por: Nam, Hongsuk, et al.
Publicado: (2015)

Advances in MoS(2)-Based Field Effect Transistors (FETs)
por: Tong, Xin, et al.
Publicado: (2015)

A Photoelectric-Stimulated MoS(2) Transistor for Neuromorphic Engineering
por: Wang, Shuiyuan, et al.
Publicado: (2019)

Hysteresis in As-Synthesized MoS(2) Transistors: Origin and Sensing Perspectives
por: Marquez, Carlos, et al.
Publicado: (2021)

Influence of post-annealing on the off current of MoS(2) field-effect transistors
por: Namgung, Seok Daniel, et al.
Publicado: (2015)

How Important Is the Metal–Semiconductor Contact for Schottky Barrier Transistors: A Case Study on Few-Layer Black Phosphorus?
por: Yang, Lingming, et al.
Publicado: (2017)

Face Dependence of Schottky Barriers Heights of Silicides and Germanides on Si and Ge
por: Li, Hongfei, et al.
Publicado: (2017)

Probing the Field-Effect Transistor with Monolayer MoS(2) Prepared by APCVD
por: Han, Tao, et al.
Publicado: (2019)

Optoelectronic synapse using monolayer MoS(2) field effect transistors
por: Islam, Molla Manjurul, et al.
Publicado: (2020)

Benchmarking monolayer MoS(2) and WS(2) field-effect transistors
por: Sebastian, Amritanand, et al.
Publicado: (2021)

Tabletop Fabrication of High-Performance MoS(2) Field-Effect Transistors
por: Cho, Ungrae, et al.
Publicado: (2022)

Cannot write session to /tmp/vufind_sessions/sess_cb947eem8777uamd83kvf3nnc3