Study of GaN coalescence by dark-field X-ray microscopy at the nanoscale

This work illustrates the potential of dark-field X-ray microscopy (DFXM), a 3D imaging technique of nanostructures, in characterizing novel epitaxial structures of gallium nitride (GaN) on top of GaN/AlN/Si/SiO(2) nano-pillars for optoelectronic applications. The nano-pillars are intended to allow...

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Detalles Bibliográficos
Autores principales: Wehbe, Maya, Charles, Matthew, Baril, Kilian, Alloing, Blandine, Pino Munoz, Daniel, Labchir, Nabil, Zuniga-Perez, Jesús, Detlefs, Carsten, Yildirim, Can, Gergaud, Patrice
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2023
Materias:
Research Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10241046/
https://www.ncbi.nlm.nih.gov/pubmed/37284275
http://dx.doi.org/10.1107/S160057672300287X

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10241046/
https://www.ncbi.nlm.nih.gov/pubmed/37284275
http://dx.doi.org/10.1107/S160057672300287X

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