Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties

Two wafers of one 4H-silicon carbide (4H-SiC) bulk crystal, one cut from a longitudinal position close to the crystal’s seed and the other close to the cap, were characterized with synchrotron white-beam X-ray topography (SWXRT) in back-reflection and transmission geometry to investigate the disloca...

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Detalles Bibliográficos
Autores principales: Roder, Melissa, Steiner, Johannes, Wellmann, Peter, Kabukcuoglu, Merve, Hamann, Elias, Haaga, Simon, Hänschke, Daniel, Danilewsky, Andreas
Formato: Online Artículo Texto
Lenguaje:English
Publicado: International Union of Crystallography 2023
Materias:
Research Papers
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10241050/
https://www.ncbi.nlm.nih.gov/pubmed/37284267
http://dx.doi.org/10.1107/S1600576723003291

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10241050/
https://www.ncbi.nlm.nih.gov/pubmed/37284267
http://dx.doi.org/10.1107/S1600576723003291

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