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Dislocation arrangements in 4H-SiC and their influence on the local crystal lattice properties
Two wafers of one 4H-silicon carbide (4H-SiC) bulk crystal, one cut from a longitudinal position close to the crystal’s seed and the other close to the cap, were characterized with synchrotron white-beam X-ray topography (SWXRT) in back-reflection and transmission geometry to investigate the disloca...
| Autores principales: | , , , , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
International Union of Crystallography
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10241050/ https://www.ncbi.nlm.nih.gov/pubmed/37284267 http://dx.doi.org/10.1107/S1600576723003291 |