Asymmetric two-dimensional ferroelectric transistor with anti-ambipolar transport characteristics

Two-dimensional (2D) ferroelectric transistors hold unique properties and positions, especially talking about low-power memories, in-memory computing, and multifunctional logic devices. To achieve better functions, appropriate design of new device structures and material combinations is necessary. W...

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Detalles Bibliográficos
Autores principales: Zhao, Yilin, Chi, Mengshuang, Liu, Jitao, Zhai, Junyi
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Springer US 2023
Materias:
Brief Communication
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10244305/
https://www.ncbi.nlm.nih.gov/pubmed/37382739
http://dx.doi.org/10.1186/s11671-023-03860-2

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10244305/
https://www.ncbi.nlm.nih.gov/pubmed/37382739
http://dx.doi.org/10.1186/s11671-023-03860-2

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