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Asymmetric two-dimensional ferroelectric transistor with anti-ambipolar transport characteristics
Two-dimensional (2D) ferroelectric transistors hold unique properties and positions, especially talking about low-power memories, in-memory computing, and multifunctional logic devices. To achieve better functions, appropriate design of new device structures and material combinations is necessary. W...
| Autores principales: | , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Springer US
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10244305/ https://www.ncbi.nlm.nih.gov/pubmed/37382739 http://dx.doi.org/10.1186/s11671-023-03860-2 |