In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers

We demonstrate in-plane gate transistors based on the molybdenum disulfide (MoS(2))/graphene hetero-structure. The graphene works as channels while MoS(2) functions as passivation layers. The weak hysteresis of the device suggests that the MoS(2) layer can effectively passivate the graphene channel....

Descripción completa

Detalles Bibliográficos
Autores principales: Tsai, Po-Cheng, Huang, Chun-Wei, Chang, Shoou-Jinn, Chang, Shu-Wei, Lin, Shih-Yen
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10244327/
https://www.ncbi.nlm.nih.gov/pubmed/37280332
http://dx.doi.org/10.1038/s41598-023-36405-9

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10244327/
https://www.ncbi.nlm.nih.gov/pubmed/37280332
http://dx.doi.org/10.1038/s41598-023-36405-9

Ejemplares similares