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In-plane gate graphene transistor with epitaxially grown molybdenum disulfide passivation layers
We demonstrate in-plane gate transistors based on the molybdenum disulfide (MoS(2))/graphene hetero-structure. The graphene works as channels while MoS(2) functions as passivation layers. The weak hysteresis of the device suggests that the MoS(2) layer can effectively passivate the graphene channel....
| Autores principales: | , , , , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
| Publicado: |
Nature Publishing Group UK
2023
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| Materias: | |
| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10244327/ https://www.ncbi.nlm.nih.gov/pubmed/37280332 http://dx.doi.org/10.1038/s41598-023-36405-9 |