In-plane anisotropy of graphene by strong interlayer interactions with van der Waals epitaxially grown MoO(3)

van der Waals (vdW) epitaxy can be used to grow epilayers with different symmetries on graphene, thereby imparting unprecedented properties in graphene owing to formation of anisotropic superlattices and strong interlayer interactions. Here, we report in-plane anisotropy in graphene by vdW epitaxial...

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Detalles Bibliográficos
Autores principales: Kim, Hangyel, Kim, Jong Hun, Kim, Jungcheol, Park, Jejune, Park, Kwanghee, Baek, Ji-Hwan, Shin, June-Chul, Lee, Hyeongseok, Son, Jangyup, Ryu, Sunmin, Son, Young-Woo, Cheong, Hyeonsik, Lee, Gwan-Hyoung
Formato: Online Artículo Texto
Lenguaje:English
Publicado: American Association for the Advancement of Science 2023
Materias:
Physical and Materials Sciences
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10246909/
https://www.ncbi.nlm.nih.gov/pubmed/37285425
http://dx.doi.org/10.1126/sciadv.adg6696

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10246909/
https://www.ncbi.nlm.nih.gov/pubmed/37285425
http://dx.doi.org/10.1126/sciadv.adg6696

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