High spin current density in gate-tunable spin-valves based on graphene nanoribbons

The usage of two-dimensional (2D) materials will be very advantageous for many developing spintronic device designs, providing a superior method of managing spin. Non-volatile memory technologies, particularly magnetic random-access memories (MRAMs), characterized by 2D materials are the goal of the...

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Detalles Bibliográficos
Autores principales: Wang, Chun-Pu, Cheng, Shih-Hung, Hsueh, Wen-Jeng
Formato: Online Artículo Texto
Lenguaje:English
Publicado: Nature Publishing Group UK 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10247789/
https://www.ncbi.nlm.nih.gov/pubmed/37286694
http://dx.doi.org/10.1038/s41598-023-36478-6

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10247789/
https://www.ncbi.nlm.nih.gov/pubmed/37286694
http://dx.doi.org/10.1038/s41598-023-36478-6

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