High spin current density in gate-tunable spin-valves based on graphene nanoribbons

The usage of two-dimensional (2D) materials will be very advantageous for many developing spintronic device designs, providing a superior method of managing spin. Non-volatile memory technologies, particularly magnetic random-access memories (MRAMs), characterized by 2D materials are the goal of the effort. A sufficiently large spin current density is indispensable for the writing mode of MRAMs to switch states. How to attain spin current density beyond critical values around 5 MA/cm(2) in 2D materials at room temperature is the greatest obstacle to overcome. Here, we first theoretically propose a spin valve based on graphene nanoribbons (GNRs) to generate a huge spin current density at room temperature. The spin current density can achieve the critical value with the help of tunable gate voltage. The highest spin current density can reach 15 MA/cm(2) by adjusting the band gap energy of GNRs and exchange strength in our proposed gate-tunable spin-valve. Also, ultralow writing power can be obtained, successfully overcoming the difficulties traditional magnetic tunnel junction-based MRAMs have faced. Furthermore, the proposed spin-valve meets the reading mode criteria and the MR ratios are always higher than 100%. These results may open the feasibility avenues for spin logic devices based on 2D materials.