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High spin current density in gate-tunable spin-valves based on graphene nanoribbons
The usage of two-dimensional (2D) materials will be very advantageous for many developing spintronic device designs, providing a superior method of managing spin. Non-volatile memory technologies, particularly magnetic random-access memories (MRAMs), characterized by 2D materials are the goal of the...
Autores principales: | Wang, Chun-Pu, Cheng, Shih-Hung, Hsueh, Wen-Jeng |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
Nature Publishing Group UK
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10247789/ https://www.ncbi.nlm.nih.gov/pubmed/37286694 http://dx.doi.org/10.1038/s41598-023-36478-6 |
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