Improvement in Switching Characteristics and Bias Stability of Solution-Processed Zinc–Tin Oxide Thin Film Transistors via Simple Low-Pressure Thermal Annealing Treatment

In this study, we used a low-pressure thermal annealing (LPTA) treatment to improve the switching characteristics and bias stability of zinc–tin oxide (ZTO) thin film transistors (TFTs). For this, we first fabricated the TFT and then applied the LPTA treatment at temperatures of 80 °C and 140 °C. Th...

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Detalles Bibliográficos
Autores principales: Feng, Junhao, Jeon, Sang-Hwa, Park, Jaehoon, Lee, Sin-Hyung, Jang, Jaewon, Kang, In Man, Kim, Do-Kyung, Bae, Jin-Hyuk
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254229/
https://www.ncbi.nlm.nih.gov/pubmed/37299625
http://dx.doi.org/10.3390/nano13111722

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254229/
https://www.ncbi.nlm.nih.gov/pubmed/37299625
http://dx.doi.org/10.3390/nano13111722

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