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Design Technology Co-Optimization Strategy for Ge Fraction in SiGe Channel of SGOI FinFET
FinFET devices and Silicon-On-Insulator (SOI) devices are two mainstream technical routes after the planar MOSFET reached the limit for scaling. The SOI FinFET devices combine the benefits of FinFET and SOI devices, which can be further boosted by SiGe channels. In this work, we develop an optimizin...
| Autores principales: | , |
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| Formato: | Online Artículo Texto |
| Lenguaje: | English |
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MDPI
2023
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| Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254321/ https://www.ncbi.nlm.nih.gov/pubmed/37299612 http://dx.doi.org/10.3390/nano13111709 |