Transport Characteristics of Silicon Multi-Quantum-Dot Transistor Analyzed by Means of Experimental Parametrization Based on Single-Hole Tunneling Model

The transport characteristics of a gate-all-around Si multiple-quantum-dot (QD) transistor were studied by means of experimental parametrization using theoretical models. The device was fabricated by using the e-beam lithographically patterned Si nanowire channel, in which the ultrasmall QDs were se...

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Detalles Bibliográficos
Autores principales: Lee, Youngmin, Jun, Hyewon, Park, Seoyeon, Kim, Deuk Young, Lee, Sejoon
Formato: Online Artículo Texto
Lenguaje:English
Publicado: MDPI 2023
Materias:
Article
Acceso en línea:https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254776/
https://www.ncbi.nlm.nih.gov/pubmed/37299712
http://dx.doi.org/10.3390/nano13111809

Internet

https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254776/
https://www.ncbi.nlm.nih.gov/pubmed/37299712
http://dx.doi.org/10.3390/nano13111809

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