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Transport Characteristics of Silicon Multi-Quantum-Dot Transistor Analyzed by Means of Experimental Parametrization Based on Single-Hole Tunneling Model
The transport characteristics of a gate-all-around Si multiple-quantum-dot (QD) transistor were studied by means of experimental parametrization using theoretical models. The device was fabricated by using the e-beam lithographically patterned Si nanowire channel, in which the ultrasmall QDs were se...
Autores principales: | Lee, Youngmin, Jun, Hyewon, Park, Seoyeon, Kim, Deuk Young, Lee, Sejoon |
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Formato: | Online Artículo Texto |
Lenguaje: | English |
Publicado: |
MDPI
2023
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Materias: | |
Acceso en línea: | https://www.ncbi.nlm.nih.gov/pmc/articles/PMC10254776/ https://www.ncbi.nlm.nih.gov/pubmed/37299712 http://dx.doi.org/10.3390/nano13111809 |
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